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KBP306G Datasheet Preview

KBP306G Datasheet

SINGLE PHASE SILICON BRIDGE RECTIFIER

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KBP3005G THRU KBP310G
SINGLE PHASE SILICON BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere
FEATURES
Glass Passivated Die Construction
Ideal for printed circuit board
Surge overload rating: 60A peak
High case dielectric strength
High temperature soldering guaranteed:
260°C/10 seconds at 5lbs. (2.3kg) tension
MECHANICAL DATA
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
Terminals: Plated leads solderable per
MIL-STD 202, method 208
Mounting Position: Any
Weight: 1.70 g
Marking: Type Number
KBP
.600(15.24)
.560(14.22)
.500(12.70)
.460(11.68)
.460(11.68)
.420(10.67)
(1.664.205)MIN.
.50
(12.7)
MIN.
.034(0.86)
.028(0.76)
.160(4.1)
.070
(1.80)
.140(3.6)
MAX.
. .165(4.20)
..132(3.35)
.053(1.35)
.045(1.15)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 3.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
KBP3005G KBP301G KBP302G KBP304G KBP306G KBP308G KBP310G UNITS
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
3.0 A
IFSM
60 A
VF
IR
TJ,TSTG
1.1
10.0
500
-55 to + 150
V
μA
0C
Note1) Marking Code “G” : Glass Passivated Die Construction




KD

KBP306G Datasheet Preview

KBP306G Datasheet

SINGLE PHASE SILICON BRIDGE RECTIFIER

No Preview Available !

KBP3005G THRU KBP310G
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
4.0
3.0
2.0
1.0
0
20 40
60 80 100 120
AMBIENT TEMPERATURE. (oC)
140 150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
80
70
60
50
40
30
20
1
2
46
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMENT
10
1
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
TJ=1250C
10
1
TJ=250C
0.1
0
20 40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.4- TYPICAL JUNCTION CAPACITANCE
1000
600
500
Tj=250C
400
300
200
100
0
0.1
0.5 1 2
5 10 20
50 100 200 500 800
REVERSE VOLTAGE. (V)
0.1
0.01
0.6
Tj=250C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.7 0.8 0.9 1.0 1.1 1.2 1.3
INSTANTANEOUS FORWARD VOLTAGE. (V)
1.4


Part Number KBP306G
Description SINGLE PHASE SILICON BRIDGE RECTIFIER
Maker KD
Total Page 2 Pages
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