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011N40P1 - KHB011N40P1

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS(Min. )= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ. ) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q 1 2 3.

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Datasheet Details

Part number 011N40P1
Manufacturer KEC
File Size 561.82 KB
Description KHB011N40P1
Datasheet download datasheet 011N40P1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.