011N40P1 khb011n40p1 equivalent, khb011n40p1.
VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC
K M L J D N N
P
F G H I J
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB011N40P1
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and e.
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