2N2906U - EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Key Features

Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V.

2N2906U epitaxial planar pnp transistor by KEC - Datasheet Preview

Datasheet Details

Part number	2N2906U
Manufacturer	KEC
File Size	774.95 KB
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet	2N2906U Datasheet

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Other Datasheets by KEC

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N2906U EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 200 150 -55 150 UNIT V V V mA mA mW EQUIVALENT CIRCUIT (TOP VIEW) Marking 2008. 9.