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2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR

2N5551C Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

2N5551C Features

* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ), IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-

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Datasheet Details

Part number
2N5551C
Manufacturer
KEC
File Size
30.18 KB
Datasheet
2N5551C-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC
KEC 2N5551C-like datasheet