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2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR

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KEC

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2N5551C EPITAXIAL PLANAR NPN TRANSISTOR by KEC - Datasheet Preview — Datasheet preview – 2N5551C

Datasheet Details

Part number	2N5551C
Manufacturer	KEC
File Size	30.18 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	2N5551C Datasheet
Additional preview pages of the 2N5551C datasheet.

Product details

Features

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ), IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ).

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Published: Jun 21, 2016 |