logo
Datasheet4U.com - 2N5551C
logo

2N5551C Datasheet, TRANSISTOR, KEC

2N5551C Datasheet, TRANSISTOR, KEC

2N5551C

datasheet Download (Size : 30.18KB)

2N5551C Datasheet
2N5551C

datasheet Download (Size : 30.18KB)

2N5551C Datasheet

2N5551C Features and benefits

2N5551C Features and benefits

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low.

2N5551C Description

2N5551C Description

EPITAXIAL PLANAR NPN TRANSISTOR

Image gallery

2N5551C Page 1 2N5551C Page 2

TAGS

2N5551C
EPITAXIAL
PLANAR
NPN
TRANSISTOR
KEC

Manufacturer


KEC

Related datasheet

2N5551

2N5551BU

2N5551HR

2N5551S

2N5551SC

2N5551TA

2N5551TF

2N555

2N5550

2N5550S

2N5552

2N5555

2N5556

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts