Datasheet Specifications
- Part number
- 2N5551C
- Manufacturer
- KEC
- File Size
- 30.18 KB
- Datasheet
- 2N5551C-KEC.pdf
- Description
- EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..
Features
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ), IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-2N5551C Distributors
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