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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (RGS 1 ) Gate-Source Voltage
Drain Current
Continuous Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL VDSS VDGR VGSS ID IDP PD Tj Tstg
RATING 60 60 20 200 500 400 150
-55 150
UNIT V V V
mA
mW
L M
C
2N7000A
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. SOURCE 2. GATE 3.
2N7000A Datasheet
