This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
Key Features
VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V
K M L J D N N
P
H
Qg(typ. )= 32.5nC
DIM.
Full PDF Text Transcription for 7D5N60F1 (Reference)
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SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has better characteristics, su...
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R KHB7D5N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ.)= 32.5nC DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
7D5N60F1 Datasheet
