VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ.)= 32.5nC DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.

KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable f.

7D50A-050EHR

7D50A-050EJR

7D5U12-12

7D0N65F1

7D0N65F2

7D100A-050EHR

7D12U12-12

7D12U15-15

7D150A-050EHR

7D30A-050EHR

7D75A-050EHR

7DJ8