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KEC

BAS23W Datasheet Preview

BAS23W Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (USM).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
VRM
VR
300
250
Continuous Forward Current
IF 200
Surge Current (10mS)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT
V
V
mA
A
mW
BAS23W
SILICON EPITAXIAL PLANAR DIODE
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L
HM
0.70
0.42 +_0.10
NK
N
N 0.10 MIN
P 0.1 MAX
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
3
21
USM
Marking
Type Name
JE
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF
IR(1)
IR(2)
CT
trr
TEST CONDITION
IF=150mA
VR=250V
VR=300V
VR=0V, f=1MHz
IR=30mA, IF=30mA
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX.
1.25
0.2
100
3
100
UNIT
A
pF
nS
2009. 1. 23
Revision No : 2
1/2




KEC

BAS23W Datasheet Preview

BAS23W Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

BAS23W
2009. 1. 23
Revision No : 2
2/2


Part Number BAS23W
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
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