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KEC

BAV99C Datasheet Preview

BAV99C Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
VR 80
IF 100
IFSM
1
PD 225*
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT
V
mA
A
mW
BAV99C
SILICON EPITAXIAL PLANAR DIODE
E
L BL
23
1
M
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
DIM MILLIMETERS
A 2.90+_ 0.1
B 1.30+0.20/-0.15
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
J 0.10
K 0.00 ~ 0.10
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
3
21
SOT-23(1)
Marking
Type Name
H8C
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
VR
VF(1)
VF(2)
VF(3)
IR
CT
TEST CONDITION
IR=100uA
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
MIN.
80
-
-
-
-
-
TYP.
-
0.61
0.74
-
-
-
MAX.
-
0.65
0.8
1.25
0.5
4
UNIT
V
V
A
pF
2015. 5. 12
Revision No : 0
1/2




KEC

BAV99C Datasheet Preview

BAV99C Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

BAV99C
IF - VF
3
10
2
10
10
1
-1
10
-2
10
0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
2.5
2.0
1.5
1.0
0.5
0
0.2
CT - VR
f=1MHz
Ta=25 C
1
3 10
30 100 200
REVERSE VOLTAGE VR (V)
10
1
-1
10
-2
10
IR - VR
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
-3
10
0
20 40 60 80
REVERSE VOLTAGE VR (V)
2015. 5. 12
Revision No : 0
2/2


Part Number BAV99C
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
PDF Download

BAV99C Datasheet PDF






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