BAV99C
BAV99C is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VR 80
IF 100
IFSM
PD 225-
Tj 150
Tstg -55 150
- Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V m A A m W
SILICON EPITAXIAL PLANAR DIODE
E L BL
23 1
M 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
SOT-23(1)
Marking
Type Name
H8C
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Voltage
Forward Voltage
Reverse Current Total Capacitance
SYMBOL VR VF(1) VF(2) VF(3) IR CT
TEST CONDITION IR=100u A IF=1m A IF=10m A IF=150m A VR=80V VR=0, f=1MHz
MIN. 80
- TYP.
- 0.61 0.74
- MAX.
- 0.65 0.8 1.25 0.5 4
UNIT...
