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E65A21VBR - STACK SILICON DIFFUSED DIODE

Download the E65A21VBR datasheet PDF. This datasheet also covers the E65A21VBS variant, as both devices belong to the same stack silicon diffused diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Average Forward Current : IO=65A. Zener Voltage : 21V(Typ. ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (E65A21VBS-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number E65A21VBR
Manufacturer KEC
File Size 345.03 KB
Description STACK SILICON DIFFUSED DIODE
Datasheet download datasheet E65A21VBR Datasheet

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Other Datasheets by KEC

Part Number Description
E65A21VBS STACK SILICON DIFFUSED DIODE
E65A27VBR STACK SILICON DIFFUSED DIODE
E65A27VBS STACK SILICON DIFFUSED DIODE
E65A37VBR STACK SILICON DIFFUSED DIODE
E65A37VBS STACK SILICON DIFFUSED DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA E65A21VBS, E65A21VBR STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=65A. Zener Voltage : 21V(Typ.) POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current IF(AV) IFSM Non-Repetitive Peak Reverse Surge Current (10mS) IRSM Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature VRSM VRM Tj Storage Temperature Range Tstg RATING 65 450 (60Hz) 65 19 16 -40 215 -40 215 UNIT A A A V V A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4 +_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.