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KDS112E - SILICON EPITAXIAL TYPE DIODE

Features

  • Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.6 (Typ. ).

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Datasheet preview – KDS112E

Datasheet Details

Part number KDS112E
Manufacturer KEC Corporation
File Size 341.91 KB
Description SILICON EPITAXIAL TYPE DIODE
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C A G H KDS112E SILICON EPITAXIAL TYPE DIODE E B 2 13 FF 1. ANODE 1 2. ANODE 2 3. CATHODE D DIM MILLIMETERS A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+_ 0.10 E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10 JH 0.50 J 0.13+_ 0.
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