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KDS112E Datasheet - KEC

SILICON EPITAXIAL TYPE DIODE

KDS112E Features

* Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C A G H KDS112E SI

KDS112E Datasheet (341.91 KB)

Preview of KDS112E PDF

Datasheet Details

Part number:

KDS112E

Manufacturer:

KEC

File Size:

341.91 KB

Description:

Silicon epitaxial type diode.

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KDS112E SILICON EPITAXIAL TYPE DIODE KEC

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