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KDV175E - Silicon Diode

Key Features

  • Low Capacitance : CT=0.25[pF] (Typ. ) Low Series resistance : rS=7[ ] (Typ. ). Designed for low Inter Modulation. Small Package : ESC. KDV175E.

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Datasheet Details

Part number KDV175E
Manufacturer KEC
File Size 453.43 KB
Description Silicon Diode
Datasheet download datasheet KDV175E Datasheet

Full PDF Text Transcription for KDV175E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KDV175E. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA VHF UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. FEATURES Low Capacitance : CT=0.25[pF] (Typ.) Low Series resistance : rS=7[ ] (...

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Low Capacitance : CT=0.25[pF] (Typ.) Low Series resistance : rS=7[ ] (Typ.). Designed for low Inter Modulation. Small Package : ESC. KDV175E SILICON EPITAXIAL PIN TYPE DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current VR IF Junction Temperature Tj Storage Temperature Range Tstg RATING 50 50 150 -55 150 UNIT V mA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Forward Voltage Total Capacitance VR IR VF CT Series Resistance rs TEST CONDITION IR=10 A VR=50V VF=50mA VR=50V, f=1MHz IF=10mA, f=100MHz MIN. 50 - TYP. - 0.95 0.25 7.0 MAX. 0.1 - UNIT V A V p

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