This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
Key Features
VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ. )= 29.5nC @VGS=10V
D N N A
KF10N60P/F
N.
Full PDF Text Transcription for KF10N60P (Reference)
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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and...
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s, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.
KF10N60P Datasheet
