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KF13N60N - N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Key Features

  • VDSS(Min. )= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max. ) Qg(typ. ) =36nC @VGS =10V d D E M P P T 1 2 3.

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Datasheet Details

Part number KF13N60N
Manufacturer KEC
File Size 88.32 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF13N60N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. H KF13N60N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B K FEATURES VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.