KF3N60F transistor equivalent, n-channel mos field effect transistor.
VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL KF3N60P
KF3N60F
UNIT
D.
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