VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B.

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES .

KF3N60D

KF3N60F

KF3N60P

KF3N40D

KF3N40I

KF3N40W

KF3N50DS

KF3N50DZ

KF3N50FS

KF3N50FZ

KF3N50IZ

KF3N80D

KF3N80F