KF4N60F transistor equivalent, n channel mos field effect transistor.
VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES .
Image gallery
TAGS
Download (Size : 381.75KB)