KF4N65P transistor equivalent, n channel mos field effect transistor.
VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF4N65P KF4N65F
Drain-So.
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