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KF5N25D Datasheet Preview

KF5N25D Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
KF5N25D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 4.4A
Drain-Source ON Resistance :
RDS(ON)(MAX)=1.1 @VGS = 10V
Qg(typ) = 6nC
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
250
30
4.4
2.8
9*
55
2.5
4.5
50
0.4
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
2.5
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
D
G
S
2014. 6. 13
Revision No : 0
1/6




KEC

KF5N25D Datasheet Preview

KF5N25D Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF5N25D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=250V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=2.2A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=200V, ID=5A
VGS=10V
(Note4,5)
VDD=125V
ID=5A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=4.4A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=5A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=3.8mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF5N25
D 001
2
1 PRODUCT NAME
2 LOT NO
MIN. TYP. MAX. UNIT
250 - - V
- 0.27 - V/
- - 10
2.0 - 4.0 V
- - 100 nA
- 0.9 1.1
-6-
- 1.5 -
- 2.5 -
- 12 -
- 12 -
- 37 -
-9-
- 250 -
- 40 -
-4-
nC
ns
pF
- -5
A
- - 20
- - 1.4 V
- 130 -
ns
- 0.6 -
C
2014. 6. 13
Revision No : 0
2/6


Part Number KF5N25D
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 6 Pages
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