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KEC

KF5N65F Datasheet Preview

KF5N65F Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 650V, ID= 5A
Drain-Source ON Resistance : RDS(ON)=1.75
Qg(typ) = 14.5nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF5N65P KF5N65F
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
5 5*
3.0 3.0*
15
150
A
mJ
3.8 mJ
4.5
100 41.7
0.8 0.33
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
1.25
3.0
/W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
/W
PIN CONNECTION
D
KF5N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
KF5N65P
O
C
F
G
B
Q
L
J
P
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF5N65F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 12. 16
Revision No : 1
1/7




KEC

KF5N65F Datasheet Preview

KF5N65F Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF5N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=650V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=2.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=520V, ID=5.0A
VGS=10V
(Note4,5)
VDD=325V
ID=5.0A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=5.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=5.0A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.4mH, IS=5.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 4.5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
650 - - V
- 0.7 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 1.5 1.75
- 14.5 -
- 3.0 -
- 5.8 -
- 35 -
- 35 -
- 65 -
- 25 -
- 720 -
- 72 -
- 7.2 -
nC
ns
pF
- -5
A
- - 20
- - 1.4 V
- 300 -
ns
- 1.8 -
C
Marking
11
KF5N65
P 001
KF5N65
2 F 001
2
1 PRODUCT NAME
2 LOT NO
2014. 12. 16
Revision No : 1
2/7


Part Number KF5N65F
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 7 Pages
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