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KF6N70I Datasheet Preview

KF6N70I Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 700V, ID= 6A
Drain-Source ON Resistance : RDS(ON)=1.65
Qg(typ) = 19nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
700
30
5.2
3.3
15
160
4.2
4.5
119
0.95
150
-55 150
1.05
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
KF6N70I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
M
N
G
FF
123
H
J
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
PC
D
5.34 +_0.3
0.7 +_ 0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
L J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
IPAK(1)
G
S
2013. 7. 12
Revision No : 0
1/6




KEC

KF6N70I Datasheet Preview

KF6N70I Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF6N70I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=700V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=560V, ID=6A
VGS=10V
(Note4,5)
VDD=350V
ID=6A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=6.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=6.0A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=8.4mH, IS=6.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
700 - - V
- 0.65 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 1.42 1.65
- 19 -
-4-
-8-
- 34 -
- 32 -
- 90 -
- 33 -
- 785 -
- 91 -
- 9.1 -
nC
ns
pF
- -6
A
- - 24
- - 1.4 V
- 345 -
ns
-3-
C
Marking
1
KF6N70
I 001
2
1 PRODUCT NAME
2 LOT NO
2013. 7. 12
Revision No : 0
2/6


Part Number KF6N70I
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 6 Pages
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