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KF7N65F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KF7N65F, a member of the KF7N65P N-CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ. )= 24nC.

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Datasheet preview – KF7N65F

Datasheet Details

Part number KF7N65F
Manufacturer KEC Corporation
File Size 75.26 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF7N65F Datasheet
Additional preview pages of the KF7N65F datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF7N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF7N65P KF7N65F Drain-Source Voltage VDSS 650 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 7 7* 4.2 4.2* 18 18* 212 1.6 4.
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