KF7N80P transistor equivalent, n channel mos field effect transistor.
VDSS=800V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.45 @VGS=10V Qg(typ.)= 45nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF7N80P KF7N80F
Drain-Sou.
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