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KIC7S08FU - 2-INPUT AND GATE

Key Features

  • High Speed : tpd=7ns(Typ. ) at VCC=5V. Low Power Dissipation : ICC=1 A(Max. ) at Ta=25 . High Noise Immunity : VNIH=VNIL=28% VCC(Min. ). Output Drive Capability : 5 LSTTL Loads. Symmetrical Output Impedance : | IOH | =IOL=2mA(Min. ) Balanced Propagation Delays : tpLH tpHL Wide Operating Voltage Range : VCC(opr)=2 6V. A A1 CC H KIC7S08FU.

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Datasheet Details

Part number KIC7S08FU
Manufacturer KEC
File Size 35.52 KB
Description 2-INPUT AND GATE
Datasheet download datasheet KIC7S08FU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA 2-INPUT AND GATE The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES High Speed : tpd=7ns(Typ.) at VCC=5V. Low Power Dissipation : ICC=1 A(Max.) at Ta=25 . High Noise Immunity : VNIH=VNIL=28% VCC(Min.). Output Drive Capability : 5 LSTTL Loads. Symmetrical Output Impedance : | IOH | =IOL=2mA(Min.