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KIC7S66FU - BILATERAL SWITCH

Features

  • High Speed : tpd=7ns(Typ. ) at VCC=5V. Low Power Dissipation : ICC=1 A(Max. ) at Ta=25 . High Noise Immunity : VNIH=VNIL=28% VCC(Min. ). Low ON Resistance : RON=100 (Typ. ) at VCC=9V. Low T. H. D : THD=0.05%(Typ. ) at VCC=5V. A A1 CC H KIC7S66FU.

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Datasheet Details

Part number KIC7S66FU
Manufacturer KEC
File Size 31.91 KB
Description BILATERAL SWITCH
Datasheet download datasheet KIC7S66FU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA BILATERAL SWITCH The KIC7S66FU is a high speed C2MOS BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the Cl input is high, and the switch turns OFF while low. Input is equipped with protection circuits against static discharge or transient excess voltage. FEATURES High Speed : tpd=7ns(Typ.) at VCC=5V. Low Power Dissipation : ICC=1 A(Max.) at Ta=25 . High Noise Immunity : VNIH=VNIL=28% VCC(Min.). Low ON Resistance : RON=100 (Typ.) at VCC=9V. Low T.H.D : THD=0.05%(Typ.) at VCC=5V.
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