KMA3D6N20SA datasheet, mosfet equivalent, KEC

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KMA3D6N20SA Features and benefits

VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L.

KMA3D6N20SA Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3.6A Drain-Source ON Resistanc.

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