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KMB010P30QA - P-Channel Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for Battery pack.

Key Features

  • VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max. ) @ VGS=-10V RDS(ON)=28m (Max. ) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

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Datasheet Details

Part number KMB010P30QA
Manufacturer KEC
File Size 734.05 KB
Description P-Channel Trench MOSFET
Datasheet download datasheet KMB010P30QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current VDSS -30 V VGSS 20 V DC ID* -10 A Pulsed IDP -80 A Drain Source Diode Forward Current IS -1.7 A Drain Power Dissipation PD* 2.