n-channel trench mosfet.
VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max.) @ VGS=10V : RDS(ON)=17.0m (Max.) @ VGS=4.5V
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This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FEATURES VDSS=40V, ID=35A. Low Dra.
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