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KMB035N40DB - N-Channel Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Back-light Inverter and Power Supply.

Key Features

  • VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max. ) @ VGS=10V : RDS(ON)=17.0m (Max. ) @ VGS=4.5V A CD B H G FF J E 123 O K L N M DIM.

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Datasheet Details

Part number KMB035N40DB
Manufacturer KEC
File Size 811.51 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet KMB035N40DB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA KMB035N40DB N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max.) @ VGS=10V : RDS(ON)=17.0m (Max.) @ VGS=4.5V A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O Max 0.