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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=17.5m (Max.) @ VGS=10V : RDS(ON)=27.0m (Max.) @ VGS=4.5V
KMB035N40DC
N-Ch Trench MOSFET
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3.