VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current .

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. FEATURES VDSS=40V, ID=60A. Low Dra.

KMB060N60PA

KMB010P30QA

KMB012N30QA

KMB014P30QA

KMB030N30D

KMB035N40DB

KMB035N40DC

KMB050N60P

KMB050N60PA

KMB054N40DA

KMB054N40DB

KMB054N40DC

KMB054N40IA