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KMB3D5N40SA - N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Load switch and Back-Light Inverter.

Key Features

  • VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=10V RDS(ON)=62m (Max. ) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM.

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Datasheet Details

Part number KMB3D5N40SA
Manufacturer KEC
File Size 54.83 KB
Description N-Channel MOSFET
Datasheet download datasheet KMB3D5N40SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. FEATURES VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.