Datasheet4U Logo Datasheet4U.com

KMB6D0DN35QB - Dual N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converters.

Key Features

  • VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual N-Ch Trench MOSFET.

📥 Download Datasheet

Datasheet Details

Part number KMB6D0DN35QB
Manufacturer KEC
File Size 894.56 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMB6D0DN35QB Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KMB110F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Kexin
KMB12F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB14F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB16F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate

Other Datasheets by KEC

Part Number Description
KMB6D0DN30QA Trench MOSFET
KMB6D0DN30QB Dual N-Channel MOSFET
KMB010P30QA P-Channel Trench MOSFET
KMB012N30QA N-Channel Trench MOSFET
KMB014P30QA Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.