KMD7D5P40QA mosfet equivalent, p-channel mosfet.
VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(ON)=30m (Max.) @ VGS=-10V RDS(ON)=37m (Max.) @ VGS=-4.5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 .
This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit.
FEATURES VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(O.
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