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KMD7D5P40QA - P-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for battery protection circuit.

Key Features

  • VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(ON)=30m (Max. ) @ VGS=-10V RDS(ON)=37m (Max. ) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

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Datasheet Details

Part number KMD7D5P40QA
Manufacturer KEC
File Size 47.12 KB
Description P-Channel MOSFET
Datasheet download datasheet KMD7D5P40QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit. FEATURES VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(ON)=30m (Max.) @ VGS=-10V RDS(ON)=37m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation DC@Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg -40 20 -7.5 -30 -30 2.