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KPM11N60D - N-Channel MOSFET

General Description

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Key Features

  • VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ. )= 24nC.

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Datasheet Details

Part number KPM11N60D
Manufacturer KEC
File Size 316.89 KB
Description N-Channel MOSFET
Datasheet download datasheet KPM11N60D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 11* 6.9* 24* 240 5.2 4.