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SEMICONDUCTOR
TECHNICAL DATA
KPM15N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=15A Drain-Source ON Resistance : RDS(ON)(Max)=0.28 @VGS=10V Qg(typ.