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KRC113 Datasheet Preview

KRC113 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
E
KRC110~KRC114
EPITAXIAL PLANAR NPN TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
50
5
100
625
150
-55 150
UNIT
V
V
V
mA
mW
2009. 2. 25
Revision No : 0
1/4




KEC

KRC113 Datasheet Preview

KRC113 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

KRC110~KRC114
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC110
ICBO
IEBO
hFE
VCE(sat)
fT *
Rise
Time
KRC111
KRC112
KRC113
tr
KRC114
KRC110
Switching
Time
Storage
Time
KRC111
KRC112
KRC113
tstg
KRC114
KRC110
Fall
Time
KRC111
KRC112
KRC113
tf
KRC114
KRC110
KRC111
Input Resistor
KRC112
KRC113
KRC114
Note : * Characteristic of Transistor Only.
R1
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VO=5V
VIN=5V
RL=1k
-
MIN.
-
-
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
0.025
0.03
0.3
0.06
0.11
3.0
2.0
6.0
4.0
5.0
0.2
0.12
2.0
0.9
1.4
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.11
13
130
28.6
61.1
UNIT
nA
nA
V
MHz
S
k
2009. 2. 25
Revision No : 0
2/4


Part Number KRC113
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
PDF Download

KRC113 Datasheet PDF






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