Download the KRC286U datasheet PDF.
This datasheet also covers the KRC281U variant, as both devices belong to the same epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J
KRC281U~KRC286U.
Full PDF Text Transcription for KRC286U (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KRC286U. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) ...
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base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J KRC281U~KRC286U EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E M B M D 3 2 1 C EQUIVALENT CIRCUIT C B R1 H N K 1. EMITTER 2. BASE 3. COLLECTOR N DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.