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KTA1241 - EPITAXIAL PLANAR PNP TRANSISTOR

Features

  • hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min. ) (VCE=-2V, IC=-4A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). High Power Dissipation : PC=1W.

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Datasheet Details

Part number KTA1241
Manufacturer KEC Corporation
File Size 316.94 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-4A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). High Power Dissipation : PC=1W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -20 -8 -5 -0.5 1 150 -55 150 UNIT V V V A A W O D KTA1241 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.
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