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SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES ᴌhFE=100ᴕ320 (VCE=-2V, IC=-0.5A). ᴌhFE=70(Min.) (VCE=-2V, IC=-4A). ᴌLow Collector Saturation Voltage.
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING -35 -20 -8 -5 -0.5 625 150
-55ᴕ150
UNIT V V V A A mW ᴱ ᴱ
L M
C
KTA1243
EPITAXIAL PLANAR PNP TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3.