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J B
EB
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES High Voltage : VCEO=-150V. High Transition Frequency : fT=120MHz(Typ.). 1W (Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4372.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-150
Collector-Emitter Voltage
VCEO
-150
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -50
Base Current
IB -10
Collector Power Dissipation
PC 500 PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTA1660 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V mA mA mW W
KTA1660
EPITAXIAL PLANAR PNP TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10 4.
KTA1660 Datasheet
