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KEC

KTA1662 Datasheet Preview

KTA1662 Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4374.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-80
Collector-Emitter Voltage
VCEO
-80
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -400
Base Current
IB -80
Collector Power Dissipation
PC 500
PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTA1662 mounted on ceramic substrate (250mm2x0.8t)
UNIT
V
V
V
mA
mA
mW
W
KTA1662
EPITAXIAL PLANAR PNP TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70 140, Y:120 240
TEST CONDITION
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-2V, IC=-50mA
VCE=-2V, IC=-200mA
IC=-200mA, IB=-20mA
VCE=-2V, IC=-5mA
VCE=-10V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
2002. 5. 9
Revision No : 3
MIN.
-
-
-80
70
40
-
-0.55
-
-
TYP.
-
-
-
-
-
-
-
120
14
MAX.
-100
-100
-
240
-
-0.4
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1/2




KEC

KTA1662 Datasheet Preview

KTA1662 Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTA1662
I C - VCE
-500
-400 -5mA
COMMON EMITTER
Ta=25 C
-3mA
-300
-200
-2mA
-1mA
-100
I B=0.5mA
0mA
0
0 -2 -4 -6 -8 -10 -12 -14
COLLECTOR-EMITTER VOLTAGE V CE (V)
500
300
100
50
30
10
-1
h FE - IC
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
VCE =-2V
-3
-10
-30 -100
-300
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
-0.5
-0.3
COMMON EMITTER
I C /I B =10
-0.1
-0.05
-0.03
-0.01
-1
Ta=100 C
Ta=25 C
Ta=-25 C
-3 -10 -30 -100
COLLECTOR CURRENT I C (mA)
-500
I C - VBE
-500
-400
COMMON EMITTER
VCE =-2V
-300
-200
-100
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-3k
-1k
-300
-100
-30
I C MAX(PULSE)
IC
MAX
(CONTINUOUS)
10ms
1ms
DC OPERATION
100ms
-10
SINGLE NONREPETITIVE
PULSE Ta=25 C
-3
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-1
-0.5 -1
-3 -10 -30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2002. 5. 9
Revision No : 3
1.2
1
1.0
0.8
Pc - Ta
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm2 x0.8t)
2 Ta=25 C
0.6 2
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2/2


Part Number KTA1662
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 2 Pages
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