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KTA1709 - EPITAXIAL PLANAR PNP TRANSISTOR

Features

  • hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

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Datasheet Details

Part number KTA1709
Manufacturer KEC Corporation
File Size 390.22 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -35 -20 -8 -5 -0.5 1.5 150 -55 150 UNIT V V V A A W KTA1709 EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.
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