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J B
AA E
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Breakdown Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC PC PC* Tj
-400 -400 -7 -100 500
1 150
Storage Temperature Range
Tstg -55 150
PC* : Mounted on Ceramic Substrate (250 2 0.85)
UNIT V V V mA mW W
KTA1759
EPITAXIAL PLANAR PNP TRANSISTOR
A H
DD K
FF
123
C
G
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN
0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
SOT-89
Marking
Type Name
Lot No.
KTA1759 Datasheet
