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SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
DC Pulse *
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* PW 10ms, Duty Cycle 50%.
VCBO VCEO VEBO
IC ICP PC Tj Tstg
RATING -600 -600 -7 -1.0 -2.0 1.0 150
-55 150
UNIT V V V
A
W
Q
KTA1807D/L
TRIPLE DIFFUSED PNP TRANSISTOR
A C
H FF
123 1. BASE 2. COLLECTOR 3.
KTA1807D Datasheet
