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KTA1862D - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max. ) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA).

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Datasheet Details

Part number KTA1862D
Manufacturer KEC
File Size 407.54 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1862D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -400 -400 -7 -2.0 -4.0 1.0 10 150 -55 150 UNIT V V V A W Q A C H FF 123 1. BASE 2. COLLECTOR 3.