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KTA1862L Datasheet Preview

KTA1862L Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES
High Breakdown Voltage, Typically : BVCEO=-400V.
Low Collector Saturation Voltage.
: VCE(sat)=-0.5V(Max.) at (IC=0.5A)
High Switching Speed, Typically
: tf= 0.4 S at IC=-1A
Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
DC
Pulse
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
RATING
-400
-400
-7
-2.0
-4.0
1.0
10
150
-55 150
UNIT
V
V
V
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30 +_ 0.1
1.00 MAX
2.30 +_ 0.2
0.5 +_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2
E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2
J 0.5 +_ 0.1
L K 2.0 +_ 0.2
L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE(1) Note
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Turn-on Time
ton
Switching Time
Turn-off Time
tstg
Storage Time
tf
Note : hFE(1) Classification O:56~120, Y:82~180.
TEST CONDITION
VCB=-400V
VEB=-5V
IC=-50 A
IC=-1mA
IE=-50 A
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
IC=-500mA, IB=-100mA
IC=-500mA, IB=-100mA
VCE=-10V, IE=-100mA, f=5MHz
VCB=-10V, IE=0mA, f=1MHz
OUTPUT
0
IB1
I B2
INPUT
IB2
20ยตsec
IB1
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
VCC =-150V
MIN.
-
-
-400
-400
-7
56
6
-
-
-
-
-
-
-
IPAK
TYP.
-
-
-
-
-
100
-
-0.3
-
18
30
0.2
-1.8
0.4
MAX.
-1.0
-1.0
-
-
-
180
-
-0.5
-1.2
-
-
-
-
-
UNIT
A
A
V
V
V
V
V
MHz
pF
S
2003. 3. 27
Revision No : 4
1/3




KEC

KTA1862L Datasheet Preview

KTA1862L Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTA1862D/L
I C - VCE
-0.5
Ta=25 C
-0.4
-0.3
-0.2
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
-2.0mA
-1.5mA
-0.1 -1.0mA
I B =-0.5mA
0
0 -2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V)
1K
300
100
30
10
3
1
-0.001
h FE - I C
Ta=25 C
VCE =-5V
-0.01
-0.1
-1
COLLECTOR CURRENT IC (A)
-3
-5
Ta=25 C
VCE =-5V
-1
I C - V BE
-0.3
-0.1
-0.03
-0.01
-0.003
-0.001
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
12
10
8
6
4
2
0
0
PC - Ta
Tc=25 C
Ta=25 C
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
2003. 3. 27
Revision No : 4
r th - t w
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
1 INFINITE HEAT SINK
2 NO HEAT SINK
100
10
1
2
1
0.1
0.001 0.01 0.1
1
10 100
PULSE WIDTH t w (sec)
1K
SAFE OPERATING AREA
-10
IC MAX(PULSE) *
-3 IC MAX(DC)
-1
-0.3
DTCcO=2P5ERCATION
-0.1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
-0.03
-0.01
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-1 -3 -10 -30 -100
-300
-1K
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/3


Part Number KTA1862L
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 3 Pages
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