Datasheet4U Logo Datasheet4U.com

KTA1862L - EPITAXIAL PLANAR PNP TRANSISTOR

Download the KTA1862L datasheet PDF. This datasheet also covers the KTA1862D variant, as both devices belong to the same epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max. ) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KTA1862D-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KTA1862L
Manufacturer KEC
File Size 407.54 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1862L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -400 -400 -7 -2.0 -4.0 1.0 10 150 -55 150 UNIT V V V A W Q A C H FF 123 1. BASE 2. COLLECTOR 3.