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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low.
: VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg
RATING -15 -12 -6 -500 -1 100 150
-55ᴕ150
UNIT V V V mA A mW ᴱ ᴱ
A G H
KTA2012E
EPITAXIAL PLANAR PNP TRANSISTOR
C
E
B
DIM MILLIMETERS
2
D
A 1.60+_ 0.10 B 0.85+_ 0.10
13
C 0.70+_ 0.10 D 0.27+0.10/-0.05
E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1. EMITTER 2. BASE 3.
KTA2012E Datasheet
