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KEC

KTB1234T Datasheet Preview

KTB1234T Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTD1854T.
www.DataSheet4U.com
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC *
Tj
-80
-50
-10
-200
-400
0.9
150
Storage Temperature Range
Tstg -55150
* Package mounted on a ceramic board (600Ὅᴧ0.8)
UNIT
V
V
V
mA
W
EQUIVALENT CIRCUIT
COLLECTOR
BASE
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
S YType Name
Lot No.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE 1
hFE 2
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
TEST CONDITION
VCB=-60V, IE=0
VEB=-8V, IC=0
IC=-10A, IE=0
IC=-1mA, IB=0
IC=-10A, IC=0
VCE=-2V, IC=-10mA
VCE=-2V, IC=-100mA
IC=-100mA, IB=-100A
IC=-100mA, IB=-100A
2001. 10. 23
Revision No : 0
MIN.
-
-
-80
-50
-10
5000
3000
-
-
TYP.
-
-
-
-
-0.9
-1.5
MAX.
-100
-100
-
-
-1.5
-2.0
UNIT
nA
nA
V
V
V
V
V
1/2




KEC

KTB1234T Datasheet Preview

KTB1234T Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTB1234T
I C - VCE
-100
-80
-60
-7µA
-A
-A
-A
-A
-40 -A
-20 -A
www.DataSheet4U.com
0 IB=0µA
0 -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
100K
50K
30K
VCE =-2V
10K
5K
3K
h FE - IC
Ta=75 C
Ta=25 C
Ta=-25 C
1K
-1
-3 -10 -30 -100 -200
COLLECTOR CURRENT I C (mA)
V CE(sat) - I C
-3
IC/I B=1000
-1
-0.5
-0.3
-0.2
-10
Ta=-25 C
Ta=25 C
Ta=75 C
-30 -50
-100
COLLECTOR CURRENT I C (mA)
-300
VBE(sat) - I C
-5 IC/IB =1000
-3
Ta=-25 C
Ta=25 C Ta=75 C
-1
-0.5
-10
-30 -50
-100
COLLECTOR CURRENT IC (mA)
-300
-200
-160
VCE =-2V
I C - VBE
-120
-80
-40
0
-0.6
-0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
-1.8
2001. 10. 23
Revision No : 0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Pc - Ta
MOUNTED ON A
CERAMIC BOARD
(600mm2 `0.8mm)
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2/2


Part Number KTB1234T
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
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