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KTB1370 - TRIPLE DIFFUSED PNP TRANSISTOR

Features

  • High Collector Current : IC=-7A. Low Collector-Emitter Saturation Voltage. : VCE(sat)=-0.5V(Max. ) at IC=-4A.

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Datasheet Details

Part number KTB1370
Manufacturer KEC Corporation
File Size 457.79 KB
Description TRIPLE DIFFUSED PNP TRANSISTOR
Datasheet download datasheet KTB1370 Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KTB1370 TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Current : IC=-7A. Low Collector-Emitter Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-4A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -100 -80 -5 -7 -1 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.
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