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SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING -120 -120 -5 -1 -2 1.5 8 150
-55 150
UNIT V V V
A
W
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3 2.9 MAX
1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.
KTB631K Datasheet
