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KTB988 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • ᴌLow Collector Saturation Voltage : VCE(sat)=-1.0V(Max. ) at IC=-3A, IB=-0.3A. ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ). ᴌComplementary to KTD1351.

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Datasheet Details

Part number KTB988
Manufacturer KEC
File Size 81.19 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTB988 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌLow Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A. ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ). ᴌComplementary to KTD1351. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ PC Junction Temperature Tj Storage Temperature Range Tstg RATING -60 -60 -7 -3 -0.5 2.0 30 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTB988 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.